arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017
Prediction of new thermodynamically stable aluminum oxides | Scientific Reports
Energies | Free Full-Text | Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review
Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks - ScienceDirect
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
arXiv:1703.01778v1 [cond-mat.mtrl-sci] 6 Mar 2017
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x =
Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition - ScienceDirect
Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys | Semantic Scholar
Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study - ScienceDirect
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Band Alignment of Al2O3 on α-(AlxGa1-x)2O3
The stability of aluminium oxide monolayer and its interface with two-dimensional materials | Scientific Reports
Electronic structure and bandgap of γ-Al2O3 compound using mBJ exchange potential | Discover Nano
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
![PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/61c9ff559ecfa5e01e3660a2ec9ac70b1cebe4b1/4-TableI-1.png "PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar")
PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar
JSTS - Journal of Semiconductor Technology and Science
Figure 5 from Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs | Semantic Scholar
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
The origin of negative charging in amorphous Al2O3 films: the role of native defects
Figure 2 from Photochemistry of the α-Al2O3-PETN Interface | Semantic Scholar
Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em> x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>
Micromachines | Free Full-Text | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
